PEALD (Plasma-Enhanced Atomic Layer Deposition)
Specifications
Gases Flow Type
: Lateral type
Available Film
: Metal oxide thin film based O2 plasma & H2O, Metal thin film base H2 plasma
Substrate Size & Temperature
: 25 ~ 400 [℃] ± 1 [%] On The Substrate of 150x150[mm²]
PLD (Pulsed Laser Deposition)
Specifications
Uniformity Zone of Substrate Heating
:Ø15 mm
Substrate Temperature
: 850°C ± 5°C in oxygen
Operating Pressure
: 0.01 mTorr ~ 10 Torr
Target Carousel
: one inch (25.4mm) diameter for four targets
RF & DC Sputtering System
(KVS-2000)
Specifications
PROCESS CHAMBER
MATERIAL : SUS 304
SIZE : Φ265 X 300(H)
2.75" CF FLANGE FOR GAUGE & GAS & EXTRA PORT
1.33" CF FLANGE FOR SHUTTER PORT
VACUUM PUMPING UNIT
TURBO PUMP & ROTARY VACUUM PUMP
SUBSTRATE UNIT
MAX TEMPERATURE : UP TO 750℃
SUBSTRATE HOLDER : 3.5" SUS
SPUTTERING GUN SOURCE
MAGNET : Nd-Fe-B
N TYPE POWER CONNECTOR
R.F POWER SUPPLY & DC POWER SUPPLY
Probe Station
Specifications
Temperature: ~ 850 °C
Cryostat: ~ 4 K
Fiber: 300 ~ 1400nm Waverlength
RF: ~ 67GHz
AFM (Atomic Force Microscope)
Specifications
Position sensitive quadrant photo detector optimized for laser wavelength.
<25 fm/Hz½ noise floor (noise level: 0.02 nm), Modular, flexible design to include optional modes
50 mm range, 250 nm resolution motorized Z Stage
76 mm range, 50 nm resolution motorized XY Stage
Contact, Dynamic, EFM, PFM, CAFM, KFM modes
PECVD (Plasma-Enhanced CVD)
Specifications
Base pressure : ~10(-6) Torr
· Gas : Ar, O2, N2
Max, temp : about 1,100 degree C
Power : RF(13.56MHz, 600W)
System control by touch panel
Automatic Pressure control
Mist-CVD (Chemical Vapor Deposition)
Specifications
Pump : Rotary Oil pump
Base pressure : ~10(-3) Torr
Max, temp : about 1,100 degree C
Heating method : Furnace
Gas : Ar, N2
Pressure control : Manual Throttle valuve
Semiconductor Analyzer (keithley 2635b)
Specifications
single-channel model with 30W power output
4 quadrant source/measure with 6-digit resoulution
Max/min voltage: 200 V / 100 nV
Max/min current: 1.5 A DC, 10 nA pulse/100 fA
Water Splitting Device
Specifications
solar simulator
a 150 W Xenon lamp
potentiostat (VSP-300, Biologic)
Lock-in Amplifier
1 mHz to 102.4 kHz range
>100 dB dynamic reserve
5 ppm/°C stability
0.01 degree phase resolution
Time constants from 10 µs to 3 ks
(up to 24 dB/oct rolloff)
Auto-gain, -phase, -reserve & -offset
Reference source
GPIB and RS-232 interfaces
Furnace
Temperature: ~ 850 °C
RTA(Rapid Thermal Annealing)
Specifications
Temperature: ~1000℃
Max. 4'' wafer
O2 500 sccm, N2 500 sccm
220 V/ 75 A/ 3 phase
Installed halogen lamps horizontally above and below the Quartz chamber