PEALD (Plasma-Enhanced Atomic Layer Deposition)
Specifications
1) Gases Flow Type
: Lateral type
2) Available Film
: Metal oxide thin film based O2 plasma & H2O, Metal thin film base H2 plasma
3) Substrate Size & Temperature
: 25 ~ 400 [℃] ± 1 [%] On The Substrate of 150x150[mm²]
PLD (Pulsed Laser Deposition)
Specifications
1) Uniformity Zone of Substrate Heating
:Ø15 mm
2) Substrate Temperature
: 850°C ± 5°C in oxygen
3) Operating Pressure
: 0.01 mTorr ~ 10 Torr
4) Target Carousel
: one inch (25.4mm) diameter for four targets
RF & DC Sputtering System
(KVS-2000)
PROCESS CHAMBER
-MATERIAL : SUS 304
-SIZE : Φ265 X 300(H)
-2.75" CF FLANGE FOR GAUGE & GAS & EXTRA PORT
-1.33" CF FLANGE FOR SHUTTER PORT
VACUUM PUMPING UNIT
-TURBO PUMP & ROTARY VACUUM PUMP
SUBSTRATE UNIT
-MAX TEMPERATURE : UP TO 750℃
-SUBSTRATE HOLDER : 3.5" SUS
SPUTTERING GUN SOURCE
-MAGNET : Nd-Fe-B
-N TYPE POWER CONNECTOR
R.F POWER SUPPLY & DC POWER SUPPLY
Probe Station
Specifications
1) Temperature
: ~ 850 °C
2) Cryostat
: ~ 4 K
3) Fiber
: 300 ~ 1400nm Waverlength
4) RF
: ~ 67GHz
AFM (Atomic Force Microscope)
Specifications
1) Position sensitive quadrant photo detector optimized for laser wavelength.
2) <25 fm/Hz½ noise floor (noise level: 0.02 nm), Modular, flexible design to include optional modes
3) 50 mm range, 250 nm resolution motorized Z Stage
76 mm range, 50 nm resolution motorized XY Stage
4) Contact, Dynamic, EFM, PFM, CAFM, KFM modes
PECVD (Plasma-Enhanced CVD)
Mist-CVD (Chemical Vapor Deposition)
Semiconductor Analyzer (keithley 2635b)
Electrical Anodize System
Water Splitting Device
Lock-in Amplifier
Centrifugal Separator
Furnace